Multi-tier scheme for logical storage management

ABSTRACT

A storage device may include a controller and a memory array including a plurality of dies arranged into a plurality of channels. In some examples, the controller may be configured to define, from the memory array, a plurality of die-sets based on respective chip enable lines associated with the plurality of dies, wherein each die-set of the plurality of die-sets includes at least one die from each of the plurality of channels; define, from a selected die-set of the plurality of die-sets, a plurality of blocksets, wherein each blockset includes a block from each die of the selected die-set; receive a unit of data to be stored; and issue commands that cause the unit of data to be stored in blocks of a selected blockset of the plurality of blocksets.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application claims the benefit of priority under 35 U.S.C. §120 as a continuation of U.S. patent application Ser. No. 14/498,566entitled “MULTI-TIER SCHEME FOR LOGICAL STORAGE MANAGEMENT,” filed onSep. 26, 2014, now issued as U.S. Pat. No. 9,582,201, the disclosure ofwhich is hereby incorporated by reference in its entirety for allpurposes.

TECHNICAL FIELD

This disclosure relates to logical storage management, and moreparticularly, to logical storage management for solid state drives.

BACKGROUND

Memory devices may include internal, semiconductor, integrated circuitsin computers or other electronics devices. There are many differenttypes of memory including random-access memory (RAM), read only memory(ROM), dynamic random access memory (DRAM), static RAM (SRAM), andsynchronous dynamic RAM (SDRAM). Memory may be non-volatile memory orvolatile memory.

The main difference between non-volatile memory and volatile memory isthat non-volatile memory may continue to store data without requiring apersistent power supply. As a result, non-volatile memory devices havedeveloped into a popular type of memory for a wide range of electronicapplications. One type of non-volatile memory includes flash memory.Flash memory devices typically use a one-transistor memory cell thatallows for high memory densities, high reliability, and low powerconsumption. Common uses for flash memory include personal computers,personal digital assistants (PDAs), digital cameras, and cellulartelephones. Program code and system data such as a basic input/outputsystem (BIOS) may be stored in flash memory devices for personal use inpersonal computer systems.

Non-volatile memory devices, including flash memory devices, are alsoincorporated into solid-state storage devices, such as solid-statedrives (SSDs).

SUMMARY

In one example, a storage device may include a memory array including aplurality of dies arranged into a plurality of channels and acontroller. In some examples, the controller may be configured todefine, from the memory array, a plurality of die-sets based onrespective chip enable lines associated with the plurality of dies,wherein each die-set of the plurality of die-sets includes at least onedie from each of the plurality of channels; define, from a selecteddie-set of the plurality of die-sets, a plurality of blocksets, whereineach blockset includes a block from each die of the selected die-set;receive a unit of data to be stored; and issue commands that cause theunit of data to be stored in blocks of a selected blockset of theplurality of blocksets

In another example, a method includes defining, from a memory arrayincluding a plurality of dies arranged into a plurality of channels, aplurality of die-sets based on respective chip enable lines associatedwith the plurality of dies, wherein each die-set of the plurality ofdie-sets includes at least one die from each of the plurality ofchannels, and defining, from a selected die-set of the plurality ofdie-sets, a plurality of blocksets, wherein each blockset includes ablock from each die of the selected die-set. In this example, the methodalso includes receiving, by a controller of the memory array, a unit ofdata to be stored; and issuing, by the controller, commands that causethe unit of data to be stored in blocks of a selected blockset of theplurality of blocksets.

In another example, a computer-readable storage medium storesinstructions that, when executed, cause one or more processors of astorage device to: define, from a memory array including a plurality ofdies arranged into a plurality of channels, a plurality of die-setsbased on respective chip enable lines associated with the plurality ofdies, wherein each die-set of the plurality of die-sets includes atleast one die from each of the plurality of channels; and define, from aselected die-set of the plurality of die-sets, a plurality of blocksets,wherein each blockset includes a block from each die of the selecteddie-set. In this example, the computer-readable storage medium alsostores instructions that, when executed, cause one or more processors ofthe storage device to receive a unit of data to be stored; and issuecommands that cause the unit of data to be stored in blocks of aselected blockset of the plurality of blocksets.

In another example, a system includes means for defining, from a memoryarray including a plurality of dies arranged into a plurality ofchannels, a plurality of die-sets based on respective chip enable linesassociated with the plurality of dies, wherein each die-set of theplurality of die-sets includes at least one die from each of theplurality of channels; and means for defining, from a selected die-setof the plurality of die-sets, a plurality of blocksets, wherein eachblockset includes a block from each die of the selected die-set. In thisexample, the system also includes means for receiving a unit of data tobe stored; and means for issuing commands that cause the unit of data tobe stored in blocks of a selected blockset of the plurality ofblocksets.

The details of one or more examples are set forth in the accompanyingdrawings and the description below. Other features, objects, andadvantages will be apparent from the description and drawings, and fromthe claims.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a conceptual and schematic block diagram illustrating anexample storage environment in which a storage device may function as astorage device for a host device, in accordance with one or moretechniques of this disclosure

FIG. 2 is a conceptual block diagram illustrating an example memorydevice that includes a plurality of blocks, each block including aplurality of pages, in accordance with one or more techniques of thisdisclosure.

FIG. 3 is a conceptual and schematic block diagram illustrating anexample controller, in accordance with one or more techniques of thisdisclosure.

FIG. 4 is a conceptual block diagram illustrating an examplenon-volatile memory array that includes a plurality memory devicesarranged into a plurality of channels, in accordance with one or moretechniques of this disclosure.

FIG. 5 is a conceptual block diagram illustrating an example techniquethat may be performed by a controller of a storage device to defineblocksets from a die-set, in accordance with one or more techniques ofthis disclosure.

FIG. 6 is a conceptual block diagram illustrating another exampletechnique that may be performed by a controller of a storage device todefine blocksets from a die-set, in accordance with one or moretechniques of this disclosure.

FIG. 7 is a flow diagram illustrating an example technique for managinga storage device using blocksets, in accordance with one or moretechniques of this disclosure.

DETAILED DESCRIPTION

To improve throughput using parallelism, an SSD controller may implementa backend management scheme by grouping together multiple physical flashblocks located on different channels and chip enable (CE) lines to formlogical containers. The SSD controller may then utilize these logicalcontainers as a basic operation unit for a logical management domain.

In some examples, the controller may construct the logical container byselecting a respective physical flash block from each target (e.g., CEline) for each physical channel. By doing so, the controller may fillall the flash blocks in the logical container concurrently and thesystem can achieve full potential in I/O throughput. For example, for acontroller with 16 physical channels and 8 CEs, a logical container sizemay be 128 physical blocks (16 channels times 8 CEs). However, in someexamples, it may not be desirable to select a block from each of thememory devices.

In general, this disclosure describes techniques for using a two-tierpartition scheme to manage a storage device. In some examples, acontroller of a storage device may define the first tier by partitioningan array of memory devices into a plurality of die-sets that may eachinclude at least one memory devices from each channel of the array. Thecontroller may define the second tier by defining a plurality ofblocksets from each of the plurality of die-sets such that each blocksetof the plurality of blocksets includes at least one block from eachrespective memory device in the die set. The controller may then utilizethe blocksets as basic units of a logical management domain. Forexample, a controller with has 8 CEs and 16 channels may implement thetechniques of this disclosure by partitioning all the memory devicesinto 8 die-sets, with each die-set containing a respective memory devicefrom each channel. In this example, the blocksets may each include 16physical flash blocks, one block from each of the 16 channels. In thisway, the controller may reduce the number of blocks included in thebasic units of the logical management domain, e.g., without compromisingpotential throughput.

Additionally, this disclosure describes techniques for dynamicallyscheduling the number of active memory devices based on different powerconsumption budgets, performance targets, or both. For instance, thecontroller may determine, in run-time, a quantity of memory devices thatmay be concurrently active, e.g., to meet a power consumption budge orperformance target. Based on the determined quantity, the controller mayschedule to write, read, or both concurrently to one or more die-sets(any number of die-sets between one and the number of die-sets of thestorage device). Increasing the number of concurrently active die-setsmay increase I/O performance of the storage device while increasing thepower consumed by the storage device. Conversely, decreasing the numberof concurrently active die-sets may decrease I/O performance of thestorage device while decreasing the power consumed by the storagedevice. In this way, the controller may dynamically schedule the numberof active memory devices to comply with different power consumptionbudgets, performance targets, or both.

FIG. 1 is a conceptual and schematic block diagram illustrating anexample storage environment 2 in which storage device 6 may function asa storage device for host device 4, in accordance with one or moretechniques of this disclosure. For instance, host device 4 may utilizenon-volatile memory devices included in storage device 6 to store andretrieve data. In some examples, storage environment 2 may include aplurality of storage devices, such as storage device 6, that may operateas a storage array. For instance, storage environment 2 may include aplurality of storages devices 6 configured as a redundant array ofinexpensive/independent disks (RAID) that collectively function as amass storage device for host device 4.

Storage environment 2 may include host device 4 which may store and/orretrieve data to and/or from one or more storage devices, such asstorage device 6. As illustrated in FIG. 1, host device 4 maycommunicate with storage device 6 via interface 14. Host device 4 maycomprise any of a wide range of devices, including computer servers,network attached storage (NAS) units, desktop computers, notebook (i.e.,laptop) computers, tablet computers, set-top boxes, telephone handsetssuch as so-called “smart” phones, so-called “smart” pads, televisions,cameras, display devices, digital media players, video gaming consoles,video streaming device, and the like.

As illustrated in FIG. 1 storage device 6 may include controller 8,non-volatile memory array 10 (NVMA 10), cache 12, and interface 14. Insome examples, storage device 6 may include additional components notshown in FIG. 1 for sake of clarity. For example, storage device 6 mayinclude power delivery components, including, for example, a capacitor,super capacitor, or battery; a printed board (PB) to which components ofstorage device 6 are mechanically attached and which includeselectrically conductive traces that electrically interconnect componentsof storage device 6; and the like. In some examples, the physicaldimensions and connector configurations of storage device 6 may conformto one or more standard form factors. Some example standard form factorsinclude, but are not limited to, 3.5″ hard disk drive (HDD), 2.5″ HDD,1.8″ HDD, peripheral component interconnect (PCI), PCI-extended (PCI-X),PCI Express (PCIe) (e.g., PCIe x1, x4, x8, x16, PCIe Mini Card, MiniPCI,etc.). In some examples, storage device 6 may be directly coupled (e.g.,directly soldered) to a motherboard of host device 4.

Storage device 6 may include interface 14 for interfacing with hostdevice 4. Interface 14 may include one or both of a data bus forexchanging data with host device 4 and a control bus for exchangingcommands with host device 4. Interface 14 may operate in accordance withany suitable protocol. For example, interface 14 may operate inaccordance with one or more of the following protocols: advancedtechnology attachment (ATA) (e.g., serial-ATA (SATA), and parallel-ATA(PATA)). Fibre Channel, small computer system interface (SCSI), seriallyattached SCSI (SAS), peripheral component interconnect (PCI), andPCI-express. The electrical connection of interface 14 (e.g., the databus, the control bus, or both) is electrically connected to controller8, providing electrical connection between host device 4 and controller8, allowing data to be exchanged between host device 4 and controller 8.In some examples, the electrical connection of interface 14 may alsopermit storage device 6 to receive power from host device 4.

Storage device 6 may include NVMA 10 which may include a plurality ofmemory devices 16Aa-16Nn (collectively, “memory devices 16”) which mayeach be configured to store and/or retrieve data. For instance, a memorydevice of memory devices 16 may receive data and a message fromcontroller 8 that instructs the memory device to store the data.Similarly, the memory device of memory devices 16 may receive a messagefrom controller 8 that instructs the memory device to retrieve data. Insome examples, each of memory devices 6 may be referred to as a die. Insome examples, a single physical chip may include a plurality of dies(i.e., a plurality of memory devices 16). In some examples, each ofmemory devices 16 may be configured to store relatively large amounts ofdata (e.g., 128 Mb, 256 Mb, 512 Mb, 1 Gb, 2 Gb, 4 Gb, 8 Gb, 16 Gb, 32Gb, 64 Gb, 128 Gb, 256 Gb, 512 Gb, 1 Tb, etc.).

In some examples, memory devices 16 may include flash memory devices.Flash memory devices may include NAND or NOR based flash memory devices,and may store data based on a charge contained in a floating gate of atransistor for each flash memory cell. In NAND flash memory devices, theflash memory device may be divided into a plurality of blocks. FIG. 2 isa conceptual block diagram illustrating an example, memory device 16Aathat includes a plurality of blocks 17A-17N (collectively, “blocks 17”),each block including a plurality of pages 19Aa-19Nm (collectively,“pages 19”). Each block of blocks 17 may include a plurality of NANDcells. Rows of NAND cells may be serially electrically connected using aword line to define a page (one page of pages 19). Respective cells ineach of a plurality of pages 19 may be electrically connected torespective bit lines. Controller 6 may write data to and reads data fromNAND flash memory devices at the page level and erase data from NANDflash memory devices at the block level.

In some examples, it may not be practical for controller 8 to beseparately connected to each memory device of memory devices 16. Assuch, the connections between memory devices 16 and controller 8 may bemultiplexed. As an example, memory devices 16 may be grouped intochannels 18A-18N (collectively, “channels 18”). For instance, asillustrated in FIG. 1, memory devices 16Aa-16Nn may be grouped intofirst channel 18A, and memory devices 16Na-16Nn may be grouped into Nthchannel 18N. The memory devices 16 grouped into each of channels 18 mayshare one or more connections to controller 8. For instance, the memorydevices 16 grouped into first channel 18A may be attached to a commonI/O bus and a common control bus. Storage device 6 may include a commonI/O bus and a common control bus for each respective channel of channels18. In some examples, each channel of channels 18 may include a set ofchip enable (CE) lines which may be used to multiplex memory devices oneach channel. For example, each CE line may be connected to a respectivememory device of memory devices 18. In this way, the number of separateconnections between controller 8 and memory devices 18 may be reduced.Additionally, as each channel has an independent set of connections tocontroller 8, the reduction in connections may not significantly affectthe data throughput rate as controller 8 may simultaneously issuedifferent commands to each channel.

In some examples, storage device 6 may include a number of memorydevices 16 selected to provide a total capacity that is greater than thecapacity accessible to host device 4. This is referred to as overprovisioning. For example, if storage device 6 is advertised to include240 GB of user-accessible storage capacity, storage device 6 may includesufficient memory devices 16 to give a total storage capacity of 256 GB.The 16 GB of storage devices 16 may not be accessible to host device 4or a user of host device 4. Instead, the additional storage devices 16may provide additional blocks 17 to facilitate writes, garbagecollection, wear leveling, and the like. Further, the additional storagedevices 16 may provide additional blocks 17 that may be used if someblocks wear to become unusable and are retired from use. The presence ofthe additional blocks 17 may allow retiring of the worn blocks withoutcausing a change in the storage capacity available to host device 4. Insome examples, the amount of over-provisioning may be defined asp=(T−D)/D, wherein p is the over-provisioning ratio, T is the totalstorage capacity of storage device 2, and D is the storage capacity ofstorage device 2 that is accessible to host device 4.

Storage device 6 includes controller 8, which may manage one or moreoperations of storage device 6. FIG. 3 is a conceptual and schematicblock diagram illustrating an example controller 20, which may be anexample of controller 6 in FIG. 1. In some examples, controller 20 mayinclude an address translation module 22, a write module 24, amaintenance module 26, a read module 28, a scheduling module 30, and aplurality of channel controllers 32A-32N (collectively, “channelcontrollers 28”). In other examples, controller 20 may includeadditional modules or hardware units, or may include fewer modules orhardware units. Controller 20 may include a microprocessor, digitalsignal processor (DSP), application specific integrated circuit (ASIC),field programmable gate array (FPGA), or other digital logic circuitry.

Controller 20 may interface with the host device 4 via interface 14 andmanage the storage of data to and the retrieval of data from memorydevices 16. For example, write module 24 of controller 20 may managewrites to memory devices 16. For example, write module 24 may receive amessage from host device 4 via interface 14 instructing storage device 6to store data associated with a logical address and the data. Writemodule 24 may manage writing of the data to memory devices 16.

For example, write module 24 may communicate with address translationmodule 22, which manages translation between logical addresses used byhost device 4 to manage storage locations of data and physical blockaddresses used by write module 24 to direct writing of data to memorydevices. Address translation module 22 of controller 20 may utilize aflash translation layer or table that translates logical addresses (orlogical block addresses) of data stored by memory devices 16 to physicalblock addresses of data stored by memory devices 16. For example, hostdevice 4 may utilize the logical block addresses of the data stored bymemory devices 16 in instructions or messages to storage device 6, whilewrite module 24 utilizes physical block addresses of the data to controlwriting of data to memory devices 16. (Similarly, read module 28 mayutilize physical block addresses to control reading of data from memorydevices 16.) The physical block addresses correspond to actual, physicalblocks (e.g., blocks 17 of FIG. 2) of memory devices 16.

In this way, host device 4 may be allowed to use a static logical blockaddress for a certain set of data, while the physical block address atwhich the data is actually stored may change. Address translation module22 may maintain the flash translation layer or table to map the logicalblock addresses to physical block addresses to allow use of the staticlogical block address by the host device 4 while the physical blockaddress of the data may change, e.g., due to wear leveling, garbagecollection, or the like.

As discussed above, write module 24 of controller 20 may perform one ormore operations to manage the writing of data to memory devices 16. Forexample, write module 24 may manage the writing of data to memorydevices 16 by selecting one or more blocks within memory devices 16 tostore the data and causing memory devices of memory devices 16 thatinclude the selected blocks to actually store the data. As discussedabove, write module 24 may cause address translation module 22 to updatethe flash translation layer or table based on the selected blocks. Forinstance, write module 24 may receive a message from host device 4 thatincludes a unit of data and a logical block address, select a blockwithin a particular memory device of memory devices 16 to store thedata, cause the particular memory device of memory devices 16 toactually store the data (e.g., via a channel controller of channelcontrollers 32 that corresponds to the particular memory device), andcause address translation module 22 to update the flash translationlayer or table to indicate that the logical block address corresponds tothe selected block within the particular memory device.

In some instances, the data to be written may be in units that arelarger than a single block (i.e., a single physical block) of a memorydevice of memory devices 16. As such, write module 24 may selectmultiple blocks, collectively referred to as a logical container, toeach store a portion of the unit of data. For instance, write module 24may define a logical container by selecting multiple blocks from asingle memory device of memory devices 16. However, in some examples, itmay not be desirable for write module 24 to select all of the blocks ofa logical container from a single memory device. For instance, it maynot be possible to write to multiple blocks included in a single memorydevice in parallel.

Therefore, as opposed to defining a logical container by selectingmultiple blocks from a single memory device of memory devices 16, writemodule 24 may define a logical container by selecting blocks from aplurality of memory devices 16. As one example, where NVMA 10 includes128 of memory devices 16 arranged into sixteen channels that each haveeight chip enable (CE) lines/targets, one CE line/target for each ofmemory devices 16 in a channel (i.e., where channel 18A includes memorydevices 16Aa-Ah, . . . , and channel 18P includes memory devices16Pa-Ph), write module 24 may define a logical container that includes128 blocks by selecting a block from each of memory devices 16Aa-16Ph.Write module 24 may then cause the plurality of memory devices 16 tostore the portions of the unit of data in parallel at the selectedblocks. In this way, write module 24 may increase the rate at which datamay be stored to memory devices 16 by writing portions of the data todifferent memory devices 16, e.g., connected to different channels 18.However, in some examples, it may not be desirable for a logicalcontainer to include a block from each of memory devices 16.

In accordance with one or more techniques of this disclosure, as opposedto defining a logical container that includes a block from each ofmemory devices 16, write module 24 may define a blockset that includes ablock from each memory device of a sub-set of memory devices 16 thatincludes at least one memory device from each of channels 18. In someexamples, the sub-set of memory devices 16 may be referred to as adie-set. For instance, write module 24 may partition memory devices 16based on respective CE lines associated with respective ones of memorydevices 16 to define a plurality of sub-sets of memory devices 16, eachsub-set including at least one memory device (e.g., die) from each ofchannels 18. For each respective sub-set of the plurality of sub-sets ofmemory devices 16, write module 24 may define a respective plurality ofblocksets, each blockset including a block from each die of therespective sub-set of the plurality of sub-sets of memory devices 16. Inthis way, e.g., by using blocksets that include fewer blocks, writemodule 24 may decrease the amount of time needed to erase blocks in ablockset, which may also decrease the latency for blocksets to return tothe free resource pool. Also in this way, the amount of time needed fora garbage collection operation to reclaim a blockset may be reduced.

In some examples, in addition to causing the portions of the unit ofdata to be stored by memory devices 16, write module 24 may cause memorydevices 16 to store information which may be used to recover the unit ofdata should one or more of the blocks fail or become corrupted. Forinstance, write module 24 may cause memory devices 16 to store parityinformation in a block within each blockset. The parity information maybe used to recover the data stored by other blocks of the blockset. Insome examples, the parity information may be an XOR of the data storedby the other blocks.

In order to write a bit with a logical value of 0 (charged) to a bitwith a previous logical value of 1 (uncharged), a large current is used.This current may be sufficiently large that it may cause inadvertentchanges to the charge of adjacent flash memory cells. To protect againstinadvertent changes, an entire block of flash memory cells may be erasedto a logical value of 1 (uncharged) prior to writing any data to cellswithin the block. Because of this, flash memory cells may be erased atthe block level and written at the page level.

Thus, to write even an amount of data that would consume less than onepage, controller 20 may cause an entire block to be erased. This maylead to write amplification, which refers to the ratio between theamount of data received from host device 4 to be written to memorydevices 16 and the amount of data actually written to memory devices 16.Write amplification contributes to faster wearing of the flash memorycells than would occur with no write amplification. Wear to flash memorycells may occur when flash memory cells are erased due to the relativelyhigh voltages used to erase the flash memory cells. Over a plurality oferase cycles, the relatively high voltages may result in changes to theflash memory cells. Eventually, the flash memory cells may wear out,such that data may no longer be written to the cells.

One technique that controller 20 may implement to reduce writeamplification and wear of flash memory cells includes writing datareceived from host device 4 to unused blocks (e.g., blocks 17 of FIG. 2)or partially used blocks. For example, if host device 4 sends data tostorage device 6 that includes only a small change from data alreadystored by storage device 6. The controller then may mark the old data asstale or no longer valid. Over time, this may reduce a number of eraseoperations blocks are exposed to, compared to erasing the block thatholds the old data and writing the updated data to the same block.

Responsive to receiving a write command from host device 4, write module24 may determine at which physical locations (blocks 17) of memorydevices 16 to write the data. For example, write module 24 may requestfrom address translation module 22 or maintenance module 26 one or morephysical block addresses that are empty (e.g., store no data), partiallyempty (e.g., only some pages of the block store data), or store at leastsome invalid (or stale) data. Upon receiving the one or more physicalblock addresses, write module 24 may define and/or select one or moreblocksets as discussed above, and communicate a message to channelcontrollers 32A-32N (collectively, “channel controllers 32”), whichcauses the channel controllers 32 to write the data to the blocks of theblockset.

Read module 28 similarly may control reading of data from memory devices16. For example, read module 28 may receive a message from host device 4requesting data with an associated logical block address. Addresstranslation module 22 may convert the logical block address to aphysical block address using the flash translation layer or table. Readmodule 28 then may control one or more of channel controllers 32 toretrieve the data from the physical block addresses. Similar to writemodule 24, read module 28 may select one or more blocksets andcommunicate a message to channel controllers 32, which causes thechannel controllers 32 to read the data from the blocks of the blockset.

Each channel controller of channel controllers 32 may be connected to arespective channel of channels 18. In some examples, controller 20 mayinclude the same number of channel controllers 32 as the number ofchannels 18 of storage device 2. Channel controllers 32 may perform theintimate control of addressing, programming, erasing, and reading ofmemory devices 16 connected to respective channels, e.g., under controlof write module 24, read module 28, and/or maintenance module 26.

Maintenance module 26 may be configured to perform operations related tomaintaining performance and extending the useful life of storage device6 (e.g., memory devices 16). For example, maintenance module 26 mayimplement at least one of wear leveling or garbage collection.

As described above, erasing flash memory cells may use relatively highvoltages, which, over a plurality of erase operations, may cause changesto the flash memory cells. After a certain number of erase operations,flash memory cells may degrade to the extent that data no longer may bewritten to the flash memory cells, and a block (e.g., block 17 of FIG.2) including those cells may be retired (no longer used by controller 20to store data). To increase the amount of data that may be written tomemory devices 16 before blocks are worn and retired, maintenance module26 may implement wear leveling.

In wear leveling, maintenance module 26 may track a number of erases ofor writes to a block or a group of blocks, for each block or group ofblocks. Maintenance module 26 may cause incoming data from host device 4to be written to a block or group of blocks that has undergonerelatively fewer writes or erases, to attempt to maintain the number ofwrites or erases for each block or group of blocks approximately equal.This may cause each block of memory devices 16 to wear out atapproximately the same rate, and may increase the useful lifetime ofstorage device 6.

Although this may reduce write amplification and wear of flash memorycells by reducing a number of erases and writing data to differentblocks, this also may lead to blocks including some valid (fresh) dataand some invalid (stale) data. To combat this, maintenance module 26 mayimplement garbage collection. In a garbage collection operation,maintenance module 26 may analyze the contents of the blocks of memorydevices 16 to determine a block that contain a high percentage ofinvalid (stale) data. Maintenance module 26 then may rewrite the validdata from the block to a different block, and then erase the block. Thismay reduce an amount of invalid (stale) data stored by memory devices 16and increase a number of free blocks, but also may increase writeamplification and wear of memory devices 16. In some examples,maintenance module 26 may perform garbage collection within each of theplurality of die-sets to generate empty blocks within block-sets. Inthis way, maintenance module 26 may increase the likelihood that emptyblocks or blocksets may be successfully defined within each die-set.

Scheduling module 30 of controller 20 may perform one or more operationsto schedule activities to be performed by memory devices 16. Forinstance, scheduling module 30 may schedule requests received from othercomponents of controller 20 to command one or more of memory devices 16to perform one or more activities during run-time. In some examples,scheduling module 30 may schedule the requests to be performed in theorder in which they were received (e.g., first-in first-out or FIFO). Insome examples, scheduling module 30 may schedule the requests based oneor more factors which may include, but are not limited to, the type ofrequest (e.g., a read request, a write request, an erase request, agarbage collection request, etc.), an amount of time elapsed since therequest was received, an amount of power that would be consumed byperformance of the request, bandwidth considerations, and the like. Asone example, scheduling module 30 may schedule activities to beperformed based on a quantity of memory devices of memory devices 16that may be concurrently active (e.g., concurrently reading, writing,and/or erasing data). For instance, scheduling module 30 may determinethe quantity of memory devices of memory device 16 that may beconcurrently active based on a power consumption budget, a performancetarget, or both. The power consumption budget may indicate an amount ofpower available for use by memory devices 16. For instance, wherestorage device 6 has a power target of 25 W, the power consumptionbudget may allocate a portion of the power target (e.g., 16 W) for useby memory devices 16. However, in some examples, the amount of powerthat would be consumed if all of memory devices 16 were concurrentlyactive may be greater than the allocated portion of the supplied power.As such, scheduling module 30 may determine a quantity of memory devices16 that may be currently active without consuming more power than theallocated portion.

For instance, where memory devices 16 are allocated X units of a powerconsumption budget and each memory device of memory devices 16 uses oneunit of power when active, scheduling module 30 may determine that Xmemory devices of memory devices 16 may be concurrently active. In someexamples, such as where a plurality of die-sets are defined from memorydevices 16, scheduling module 30 may determine a quantity of die-sets ofthe plurality of die-sets that may be concurrently active. For instance,where memory devices 16 are allocated X units of a power consumptionbudget, each memory device of memory devices 16 uses one unit of powerwhen active, and each die-set includes X/2 memory devices of memorydevices 16, scheduling module 30 may determine that two die-sets of theplurality of die-sets may be concurrently active.

In order to comply with the power consumption budget, scheduling module30 may refrain from scheduling activities to be performed by therespective sub-sets of memory devices 16 respectively included in theplurality of die-sets that would cause more of the plurality of die-setsto be concurrently active than the determined quantity of die-sets thatmay be concurrently active. For example, where scheduling module 30determines that one die-set of the plurality of die-sets may beconcurrently active, scheduling module 30 may schedule activities suchthat first commands are issued that cause a first die-set of theplurality of die-sets to be active during a first period of time suchthat an amount of power consumed by memory devices 16 during the firstperiod of time satisfies the power consumption budget, and secondcommands are issued that cause a second die-set of the plurality ofdie-sets to be active during a second, different period of time suchthat an amount of power consumed by memory devices 16 during the second,different period of time also satisfies the power consumption budget.The first die-set may be the same die-set as the second die-set or thefirst die-set may be a different die-set than the second die-set.

Scheduling module 30 may also determine the quantity of die-sets thatmay be concurrently active based on one or more performance targets. Forinstance, scheduling module 30 may schedule the activities such thatstorage device 6 achieves one or more of a write rate target (e.g., 1.5GB/s), a read rate target (e.g., 3.0 GB/s), one or more input/outputoperations per second (IOPS) targets (e.g., sequential read/write,random read/write, and total), and the like.

In some examples, the activities scheduled by scheduling module 30 maytake varying amounts of time and/or power to complete. As one example, awrite activity may take longer (e.g., 2× longer, 5× longer, 10× longer,etc.) to perform than a read activity. As another example, the amount ofpower consumed by a memory device of memory devices 16 when performing awrite activity may be larger than the amount of power consumed by the amemory device of memory devices 16 when performing a read activity(e.g., 2× more, 5× more, 10× more, etc.). In some examples, schedulingmodule 30 may utilize these differences when scheduling activitiesand/or when determining the quantity of die-sets that may beconcurrently active. For instance, where performing a read activityconsumes less power as performing a write activity, scheduling module 30may determine that more die-sets may concurrently perform readactivities than may concurrently perform write activities. In one ormore of these ways, scheduling module 30 may schedule activities toachieve one or more performance targets.

In some examples, the messages received from host device 4 may not beevenly balanced between requests to read data and requests to writedata. For instance, a ratio of requests to read data to requests towrite data may be 1:0 (i.e., 100% requests to read data), 3:1 (i.e., 75%requests to read data and 25% requests to write data), 1:1 (i.e., 50%requests to read data and 50% requests to write data), 1:3 (i.e., 25%requests to read data and 75% requests to write data), 0:1 (i.e., 0%requests to read data and 100% requests to write data), and anything inbetween. In some examples, scheduling module 30 may utilize this ratiowhen scheduling activities and/or when determining the quantity ofdie-sets that may be concurrently active. For instance, where the amountof time taken to perform a read activity is less than the amount of timetaken to perform a write activity, scheduling module 30 may schedulemultiple read activities to occur during the same period of time as asingle write activity. As such, storage device 6 may realize a higherread rate than write rate. In one or more of these ways, schedulingmodule 30 may schedule activities to achieve one or more performancetargets.

As discussed above, maintenance module 26 may perform one or moremaintenance activities, such as garbage collection, on memory devices 16in order to e.g., increase the number of free blocks/blocksets. As such,in some examples, scheduling module 30 may prioritize garbage collectionrequests over requests based on messages received from host device 4(e.g., requests to read and/or write data) by allocating a quantity ofdie sets that may be concurrently used for garbage collection andallocating a quantity of die-sets that may be concurrently available tohost device 4 during a particular period of time.

Based on the determined quantities, scheduling module 30 may scheduleactivities such that, during a particular period of time, a first set ofthe die-sets perform activities based on messages received from hostdevice 4 and a second set of the die-sets perform garbage collectionactivities. In some examples, the first set of the die-sets may includea quantity of die-sets that is less than or equal to the quantity ofdie-sets that may be concurrently available to the host. In someexamples, the second set of the die-sets may include a quantity ofdie-sets that is less than or equal to a difference between thedetermined quantity of die-sets that may be concurrently active and aquantity of die-sets that are scheduled to perform activities based onmessages received from host device 4 during the particular period oftime (i.e., the quantity of die-sets to which the controller issuescommands based on the messages received from the host during theparticular period of time). In this way, scheduling module 8 may balancethe need to perform garbage collection with the amount of bandwidthavailable to host device 4 while satisfying the power consumptionbudget.

Additionally, scheduling module 30 may schedule different die-sets toconcurrently perform different activities (e.g., reading, writing, anderasing). For instance, as opposed to scheduling all of the die-sets toconcurrently perform a write activity, scheduling module 30 mayconcurrently schedule a first die-set to perform a read activity, asecond die-set to perform a write activity, a third die-set to performan erase activity, and a fourth die-set to be idle. In this way, e.g.,by partitioning memory devices 16 into a plurality of die-sets,techniques of this disclosure may enable scheduling module 30 toefficiently schedule different types of operations/activities.

FIG. 4 is a conceptual and schematic diagram illustrating furtherdetails of an example non-volatile memory array 10 of FIG. 1, inaccordance with one or more techniques of this disclosure. As discussedabove, memory devices 16 may be grouped into channels 18 and the memorydevices of memory devices 16 on each channel may share one or moreconnections to controller 8. For instance, the memory devices 16 groupedinto a respective channel of channels 18 may be attached to a respectivecommon I/O bus of I/O buses 34A-34N (collectively, “I/O buses 34”) and arespective common control bus of control busses 36A-36N (collectively,“control buses 36”). As illustrated in FIG. 4, memory devices 16Aa-16Anof channel 18A may each be attached to I/O bus 34A and control bus 36A.

In some examples, each respective I/O bus of I/O buses 34 may include aplurality of bidirectional I/O lines (e.g., 8 lines, 16 lines, etc.)that may be used to exchange address information, data, and instructioninformation between controller 8 and memory devices 16 attached to therespective I/O bus. In some examples, each respective control bus ofcontrol buses 36 may include a plurality of lines that may be used toexchange control signals, and status information between controller 8and memory devices 16 attached to the respective control bus. Forinstance, an example control bus of control buses 36 may include anaddress latch enable (ALE) line, a command latch enable (CLE) line, aread-enable (RE) line, a write-enable (WE) line, and a write-protect(WP) line that may be used by controller 8 to send commands to a memorydevice of memory devices 16; and a ready/busy (R/B) line that may beused by a memory device of memory devices 16 to send status informationto controller 8.

As discussed above, each of channels 18 may include a set of chip enable(CE) lines which may be used to multiplex memory devices on eachchannel. For example, as illustrated in FIG. 4, CE lines 38Aa-38Na maybe used to multiplex memory devices 16Aa-16An of channel 18A. Forinstance, to send a message to memory device 16Aa, controller 8 may senda signal via CE0 38Aa that causes memory device 16Aa to “listen” to oneor both of the signals on I/O bus 34A and the signals on control bus36A. Controller 8 may then issue a command to memory device 16Aa byoutputting signals on one or both of I/O bus 34A and control bus 36A. Inthis way, controller 8 may multiplex memory devices of memory devices 16within a particular channel of channels 18.

In accordance with one or more techniques of this disclosure, controller8 may define a blockset that includes a block from each memory device ofa sub-set (or die-set) of memory devices 16 that includes at least onememory device from each of channels 18. As discussed above andillustrated in FIG. 4, controller 8 may partition memory devices 16 todefine die-sets 40A-40N (collectively, “die-sets 40”) that each includeat least one memory device (e.g., die) from each of channels 18. In someexamples, controller 8 may partition memory devices 16 into die-sets 40based on CE lines associated with memory devices 16. For instance,controller 8 may partition all of the dies physically located on aparticular CE line (i.e., CE0 on each of channels 18) into a particular(or selected) die-set of die-sets 40. As one example, controller 8 maypartition memory devices of memory devices 16 physically located on CE0of each channel (i.e., memory devices 16Aa, 16Ba, . . . , and 16Na) intodie-set 40A. In some examples, controller 8 may partition memory devices16 into die-sets 40 based on other arrangements. For instance,controller 8 may partition memory devices of memory devices 16physically located on varying CEs of each channel (i.e., memory devices16Aa, 16Bc, . . . , and 16Nb) into a die-set. Further details of anexample die-set 40A of die-sets 40 are discussed below with respect tothe conceptual diagram illustrated in FIG. 5.

As illustrated in FIG. 5, each memory device 16Aa-16Na of die-set 40Aincludes 16 blocks. Although 16 blocks are illustrated for each ofmemory devices 16Aa-16Na in the example of FIG. 5, in other examples,each of memory devices 16Aa-16Na may include more blocks. From theplurality of memory devices 16Aa-16Na in die-set 40A, controller 8 maydefine a plurality of blocksets 42A-42N (collectively, “blocksets 42”).Each blockset of blocksets 42 may include a block (e.g., a single block)from each die of the die-set 40A.

In some examples, controller 8 may select a block from a particularlocation within memory devices 16Aa, 16Ba, . . . , and 16Na to define ablockset of blocksets 42. For example, as illustrated in FIG. 5, eachblock included in blockset 42A is from a respective location 5 of eachof memory devices 16Aa, 16Ba, . . . , and 16Na. In some examples,controller 8 may select block from varying locations within memorydevices 16Aa, 16Ba, . . . , and 16Na to define a blockset of blocksets42. For example, as illustrated in FIG. 5, blockset 42B may includeblock 4 from memory device 16Aa, block 7 from memory device 16Ba, block12 from memory device 16Ca, . . . , and block 7 from memory device 16Na.In some examples, such as where it is no longer desirable to use a blockat a particular location of a memory device (e.g., where the block hasfailed, has a relatively large write/erase cycle count compared to otherblocks of the same memory device, etc.), controller 8 may continue toselect blocks at the particular location (or a different location) fromother memory devices within die-set 40A to define blocksets.

In some examples, controller 8 may define the blocksets using avirtualized arrangement of memory devices 16 within NVMA 10. Forinstance, as opposed to selecting a single memory device of memorydevices 16 from each of physical channels 18, controller 8 may selectmultiple memory devices of memory devices 16 from each of physicalchannels 18 to define a die-set of die-sets 40. In particular,controller 8 may select memory devices of memory devices 16 attached todifferent CE lines within each of physical channels 18 to define adie-set of die-sets 40. For example, FIG. 6 is a conceptual blockdiagram illustrating another example technique that may be performed bya controller of a storage device to define blocksets from a die-set, inaccordance with one or more techniques of this disclosure. Asillustrated in the example of FIG. 6, controller 8 may define die-set40A′ by selecting memory devices 16Aa, 16Ba, 16Ca, . . . , and 16Na andmemory devices 16Ab, 16Bb, 16Cb, . . . , and 16Nb. Additionally, asdiscussed above with reference to FIG. 4, memory devices 16Aa, 16Ba,16Ca, . . . , and 16Na may be connected to a first set of chip enablelines, e.g., CE0 38Aa-38An, and memory devices 16Ab, 16Bb, 16Cb, . . . ,and 16Nb may be connected to a second set of chip enable lines, e.g.,CE1 38Ba-38Bn.

Within each die-set of die-sets 40, controller 8 may respectively mapthe memory devices of memory devices 16 that are attached to each ofchannels 18 to a plurality of virtual channels. In the example of FIG.6, controller 8 may map memory devices 16Aa, 16Ba, 16Ca, . . . , and16Na to a first set of virtual channels and map memory devices 16Ab,16Bb, . . . , and 16Nb to a second set of virtual channels, e.g., basedon the CE enable lines to which memory devices 16Aa, 16Ba, 16Ca, . . . ,and 16Na; and memory devices 16Ab, 16Bb, . . . , and 16Nb are connected,respectively. In this way, controller 8 may define a greater quantity ofvirtual channels that the quantity of physical channels to which memorydevices 16 are actually attached. In some examples, this may allowcontroller 8 or 20 to access increased parallelism of memory devices 16.

Controller 8 may then define blocksets 42 using the techniques describedabove. For example, for a particular die-set of die-sets 40, controller8 may define a plurality of blocksets 42 that may each include a blockfrom each die of the particular (or selected) die-set. Where theparticular die-set includes memory devices of memory devices 16 attachedto different CE lines within each of physical channels 18, controller 8may define a blockset of blocksets 42 by selecting a block from eachmemory device of memory devices 16 that is attached to a different CEline within each of physical channels 18. As illustrated in the exampleof FIG. 6, controller 8 may define blockset 42A′ by selecting a blockfrom each of memory devices 16Aa, 16Ba, 16Ca, . . . , and 16Na and eachof memory devices 16Ab, 16Bb, 16Cb, . . . , and 16Nb.

FIG. 7 is a flow diagram illustrating an example technique for definingdie-sets and blocksets within a storage device, in accordance with oneor more techniques of this disclosure. The technique of FIG. 7 will bedescribed with concurrent reference to storage device 6 and controller 8of FIG. 1 and controller 20 of FIG. 3 for ease of description, althoughcomputing devices having configurations different than that of storagedevice 6, controller 8, or controller 20 may perform the techniques ofFIG. 7.

In accordance with one or more techniques of this disclosure, controller8 may define, from a memory array (e.g., NVMA 10) including a pluralityof dies (e.g., memory devices 16) arranged into a plurality of channels(e.g., channels 18), a plurality of die-sets that each include at leastone die from each of the plurality of channels (702). For instance,write module 24 of controller 20 may define a plurality of die-sets 40in accordance with the techniques described above with reference to FIG.4. In some examples, write module 24 may define the plurality ofdie-sets by receiving program instructions that indicate thepartitioning of memory devices 16 into die-sets 40.

Controller 8 may define, from a selected die-set of the plurality ofdie-sets, a plurality of blocksets that each include a block from eachdie of the selected die-set (704). As one example, write module 24 maydefine a plurality of blocksets 42 from die-set 40A that that eachinclude a block from each die of die-set 40A in accordance with thetechniques described above with reference to FIG. 5. In some examples,controller 8 may redefine one or more of the plurality of blocksetsbased on status information of the blocks. For instance, where aparticular block of a particular memory device fails, controller 8 mayselect another block from the particular memory device to re-define ablockset that included the particular block.

Controller 8 may receive a unit of data to be stored (706). Forinstance, controller 8 may receive message from a host device, such ashost device 4 of FIG. 1, that includes a logical block address and theunit of data to be stored.

Controller 8 may issue commands that cause portions of the unit of datato be stored in blocks of a selected blockset of the plurality ofblocksets (708). For example, write module 24 of controller 8 may dividethe unit of data into a plurality of respective portions and issuecommands that cause memory devices of memory devices 16 that includerespective blocks of the particular blockset to store the respectiveportions of the unit of data.

In this way, e.g., by concurrently writing the respective portions ofthe data to the respective blocks of memory devices on differentchannels, controller 8 may improve throughput using parallelism. Also inthis way, controller 8 may reduce the number of blocks included in thebasic units of the logical management domain, e.g., without compromisingpotential throughput.

The following examples may illustrate one or more of the techniques ofthis disclosure.

Example 1

A method comprising: defining, from a memory array including a pluralityof dies arranged into a plurality of channels, a plurality of die-setsbased on respective chip enable lines associated with the plurality ofdies, wherein each die-set of the plurality of die-sets includes atleast one die from each of the plurality of channels; defining, from aselected die-set of the plurality of die-sets, a plurality of blocksets,wherein each blockset includes a block from each die of the selecteddie-set; receiving, by a controller of the memory array, a unit of datato be stored; and issuing, by the controller, commands that cause theunit of data to be stored in blocks of a selected blockset of theplurality of blocksets.

Example 2

The method of example 1, further comprising: determining, by thecontroller, a quantity of die-sets that may be concurrently active;issuing, by the controller, commands to a set of the plurality ofdie-sets that includes a number of die-sets that is less than or equalto the quantity of die-sets that may be concurrently active; andrefraining, by the controller, from issuing commands that would causemore of the plurality of die-sets to be concurrently active than thequantity of die-sets that may be concurrently active.

Example 3

The method of any combination of examples 1-2, further comprising:issuing, by the controller, first commands that cause a first sub-set ofthe plurality of die-sets to be active during a first period of timesuch that an amount of power consumed by the memory array during thefirst period of time is less than or equal to a power consumptionbudget; and issuing, by the controller, second commands that cause asecond sub-set of the plurality of die-sets to be active during a secondperiod of time such that an amount of power consumed by the memory arrayduring the second period of time also less than or equal to the powerconsumption budget.

Example 4

The method of any combination of examples 1-3, wherein the secondsub-set includes at least one die-set of the plurality of die-sets notincluded in the first sub-set such that dies of the at least one die-setare active during the second period of time but not active during thefirst period of time.

Example 5

The method of any combination of examples 1-4, wherein issuing the firstcommands comprises: issuing a first command from a command set to diesof a first die-set of the first sub-set, wherein the command setincludes a read command, a write command, and an erase command; andissuing a second, different, command from the command set to dies of asecond die-set of the first sub-set.

Example 6

The method of any combination of examples 1-5, wherein determining thequantity of die-sets to be concurrently active comprises: determiningthe quantity of die-sets that may be concurrently active during run-timeand based on at least one of a power consumption budget or a performancetarget.

Example 7

The method of any combination of examples 1-6, further comprising:performing garbage collection within the plurality of die-sets togenerate empty block-sets.

Example 8

The method of any combination of examples 1-7, wherein determining thequantity of die-sets that may be concurrently active comprisesdetermining a first quantity of die-sets that may be concurrently activeduring a particular period of time, the method further comprising:determining, by the controller, a second quantity of die-sets that maybe concurrently available to a host during the particular period oftime, wherein the second quantity of die-sets is less than or equal tothe first quantity of die-sets; issuing, by the controller and based onmessages received from the host, commands to a first set of die-sets ofthe plurality of die-sets that includes a number of die-sets that isless than or equal to the second quantity of die-sets; determining adifference between the first quantity of die-sets and the number ofdie-sets to which the controller issued commands based on the messagesreceived from the host; and performing garbage collection on a secondset of die-sets of the plurality of die-sets that includes a quantity ofdie-sets that is less than or equal to the determined difference.

Example 9

The method of any combination of examples 1-8, further comprising:defining the particular die-set by at least selecting a single die ofthe plurality of dies from each of the plurality of channels.

Example 10

The method of any combination of examples 1-9, wherein the plurality ofchannels include N physical channels, the method further comprising:defining the selected die-set by at least selecting, from each of theplurality of channels, at least two of the plurality of dies that areassociated with different chip enable lines; and mapping the selecteddies to M virtual channels where M is an integer at least twice as largeas N.

Example 11

A storage device comprising: a memory array including a plurality ofdies arranged into a plurality of channels; and a controller configuredto: define, from the memory array, a plurality of die-sets based onrespective chip enable lines associated with the plurality of dies,wherein each die-set of the plurality of die-sets includes at least onedie from each of the plurality of channels; define, from a selecteddie-set of the plurality of die-sets, a plurality of blocksets, whereineach blockset includes a block from each die of the selected die-set;receive a unit of data to be stored; and issue commands that cause theunit of data to be stored in blocks of a selected blockset of theplurality of blocksets.

Example 12

The storage device of example 11, wherein the controller is furtherconfigured to perform the method of any combination of examples 1-10.

Example 13

A computer-readable storage medium storing instructions that, whenexecuted, cause one or more processors of a storage device to: define,from a memory array including a plurality of dies arranged into aplurality of channels, a plurality of die-sets based on respective chipenable lines associated with the plurality of dies, wherein each die-setof the plurality of die-sets includes at least one die from each of theplurality of channels; define, from a selected die-set of the pluralityof die-sets, a plurality of blocksets, wherein each blockset includes ablock from each die of the selected die-set; receive a unit of data tobe stored; and issue commands that cause the unit of data to be storedin blocks of a selected blockset of the plurality of blocksets.

Example 14

The computer-readable storage medium of example 13, further storinginstructions that, when executed, cause one or more processors of thestorage device to perform the method of any combination of examples1-10.

Example 15

A system comprising: means for defining, from a memory array including aplurality of dies arranged into a plurality of channels, a plurality ofdie-sets based on respective chip enable lines associated with theplurality of dies, wherein each die-set of the plurality of die-setsincludes at least one die from each of the plurality of channels; meansfor defining, from a selected die-set of the plurality of die-sets, aplurality of blocksets, wherein each blockset includes a block from eachdie of the selected die-set; means for receiving a unit of data to bestored; and means for issuing commands that cause the unit of data to bestored in blocks of a selected blockset of the plurality of blocksets.

Example 16

The system of example 15, further comprising means for performing themethod of any combination of examples 1-10.

The techniques described in this disclosure may be implemented, at leastin part, in hardware, software, firmware, or any combination thereof.For example, various aspects of the described techniques may beimplemented within one or more processors, including one or moremicroprocessors, digital signal processors (DSPs), application specificintegrated circuits (ASICs), field programmable gate arrays (FPGAs), orany other equivalent integrated or discrete logic circuitry, as well asany combinations of such components. The term “processor” or “processingcircuitry” may generally refer to any of the foregoing logic circuitry,alone or in combination with other logic circuitry, or any otherequivalent circuitry. A control unit including hardware may also performone or more of the techniques of this disclosure.

Such hardware, software, and firmware may be implemented within the samedevice or within separate devices to support the various techniquesdescribed in this disclosure. In addition, any of the described units,modules or components may be implemented together or separately asdiscrete but interoperable logic devices. Depiction of differentfeatures as modules or units is intended to highlight differentfunctional aspects and does not necessarily imply that such modules orunits must be realized by separate hardware, firmware, or softwarecomponents. Rather, functionality associated with one or more modules orunits may be performed by separate hardware, firmware, or softwarecomponents, or integrated within common or separate hardware, firmware,or software components.

The techniques described in this disclosure may also be embodied orencoded in an article of manufacture including a computer-readablestorage medium encoded with instructions. Instructions embedded orencoded in an article of manufacture including a computer-readablestorage medium encoded, may cause one or more programmable processors,or other processors, to implement one or more of the techniquesdescribed herein, such as when instructions included or encoded in thecomputer-readable storage medium are executed by the one or moreprocessors. Computer readable storage media may include random accessmemory (RAM), read only memory (ROM), programmable read only memory(PROM), erasable programmable read only memory (EPROM), electronicallyerasable programmable read only memory (EEPROM), flash memory, a harddisk, a compact disc ROM (CD-ROM), a floppy disk, a cassette, magneticmedia, optical media, or other computer readable media. In someexamples, an article of manufacture may include one or morecomputer-readable storage media.

In some examples, a computer-readable storage medium may include anon-transitory medium. The term “non-transitory” may indicate that thestorage medium is not embodied in a carrier wave or a propagated signal.In certain examples, a non-transitory storage medium may store data thatcan, over time, change (e.g., in RAM or cache).

Various examples have been described. These and other examples arewithin the scope of the following claims.

What is claimed is:
 1. A storage device, comprising: a memory arrayincluding a plurality of dies arranged into a plurality of channels,wherein each of the plurality of dies includes a plurality of blocks;and a controller configured to: determine a first quantity of die-setsthat may be concurrently active based on a first command type, whereineach die-set includes at least one die of the plurality of dies fromeach of the plurality of channels; and issue a respective command of thefirst command type for a blockset in each of a plurality of die-sets upto the determined first quantity of die-sets, wherein each blocksetincludes a block from each die of the respective die-set.
 2. The storagedevice of claim 1, wherein the controller is further configured to:determine a second quantity of die-sets that may be concurrently activebased on a second command type different from the first command type;and issue a respective command of the second command type for a blocksetin each of a plurality of die-sets up to the determined second quantityof die-sets.
 3. The storage device of claim 2, wherein the commands ofthe first command type are issued during a first time period and thecommands of the second command type are issued during a second timeperiod different from the first time period.
 4. The storage device ofclaim 2, wherein the determined first quantity of die-sets is differentfrom the determined second quantity of die sets.
 5. The storage deviceof claim 2, wherein the controller is further configured to determinethe first and second quantities of die-sets that may be concurrentlyactive based on a power consumption budget for the plurality of dies. 6.The storage device of claim 2, wherein the controller is furtherconfigured to determine the first and second quantities of die-sets thatmay be concurrently active based on a throughput performance target forthe storage device.
 7. The storage device of claim 2, wherein the firstcommand type is one of a write command, a read command, or an erasecommand, and wherein the second command type is one of a write command,a read command, or an erase command and is different from the firstcommand type.
 8. A method, comprising: determining a first quantity ofdie-sets that may be concurrently active based on a first command type,wherein each die-set includes at least one die of a plurality of diesfrom each of a plurality of channels; and issuing a respective commandof the first command type for a blockset in each of a plurality ofdie-sets up to the determined first quantity of die-sets, wherein eachblockset includes a block from each die of the respective die-set. 9.The method of claim 8, further comprising: determining a second quantityof die-sets that may be concurrently active based on a second commandtype different from the first command type; and issuing a respectivecommand of the second command type for a blockset in each of a pluralityof die-sets up to the determined second quantity of die-sets.
 10. Themethod of claim 9, wherein the commands of the first command type areissued during a first time period and the commands of the second commandtype are issued during a second time period different from the firsttime period.
 11. The method of claim 9, wherein the determined firstquantity of die-sets is different from the determined second quantity ofdie sets.
 12. The method of claim 9, wherein the first and secondquantities of die-sets that may be concurrently active are determinedbased on a power consumption budget for the plurality of dies.
 13. Themethod of claim 9, wherein the first and second quantities of die-setsthat may be concurrently active are determined based on a throughputperformance target for a storage device.
 14. The method of claim 9,wherein the first command type is one of a write command, a readcommand, or an erase command, and wherein the second command type is oneof a write command, a read command, or an erase command and is differentfrom the first command type.
 15. A non-transitory computer-readablestorage medium storing instructions that, when executed, cause one ormore processors of a storage device to perform a method comprising:determining a first quantity of die-sets that may be concurrently activebased on a first command type, wherein each die-set includes at leastone die of a plurality of dies from each of a plurality of channels; andissuing a respective command of the first command type for a blockset ineach of a plurality of die-sets up to the determined first quantity ofdie-sets, wherein each blockset includes a block from each die of therespective die-set.
 16. The non-transitory computer-readable storagemedium of claim 15, wherein the method further comprises: determining asecond quantity of die-sets that may be concurrently active based on asecond command type different from the first command type; and issuing arespective command of the second command type for a blockset in each ofa plurality of die-sets up to the determined second quantity ofdie-sets.
 17. The non-transitory computer-readable storage medium ofclaim 16, wherein the commands of the first command type are issuedduring a first time period and the commands of the second command typeare issued during a second time period different from the first timeperiod.
 18. The non-transitory computer-readable storage medium of claim16, wherein the determined first quantity of die-sets is different fromthe determined second quantity of die sets.
 19. The non-transitorycomputer-readable storage medium of claim 16, wherein the first andsecond quantities of die-sets that may be concurrently active aredetermined based on a power consumption budget for the plurality ofdies.
 20. The non-transitory computer-readable storage medium of claim16, wherein the first and second quantities of die-sets that may beconcurrently active are determined based on a throughput performancetarget for the storage device.
 21. The non-transitory computer-readablestorage medium of claim 16, wherein the first command type is one of awrite command, a read command, or an erase command, and wherein thesecond command type is one of a write command, a read command, or anerase command and is different from the first command type.